The new generic NAND ECC framework stores the configuration and
requirements in separate places since commit 93ef92f6f4 ("mtd: nand: Use
the new generic ECC object"). In 5.10.x The SPI NAND layer still uses only
the requirements to track the ECC properties. This mismatch leads to
values of zero being used for ECC strength and step_size in the SPI NAND
layer wherever nanddev_get_ecc_conf() is used and therefore breaks the SPI
NAND on-die ECC support in 5.10.x.
By using nanddev_get_ecc_requirements() instead of nanddev_get_ecc_conf()
for SPI NAND, we make sure that the correct parameters for the detected
chip are used. In later versions (5.11.x) this is fixed anyway with the
implementation of the SPI NAND on-die ECC engine.
Cc: stable@vger.kernel.org # 5.10.x
Reported-by: voice INTER connect GmbH <developer@voiceinterconnect.de>
Signed-off-by: Frieder Schrempf <frieder.schrempf@kontron.de>
Acked-by: Miquel Raynal <miquel.raynal@bootlin.com>
Signed-off-by: Greg Kroah-Hartman <gregkh@linuxfoundation.org>
Currently there are 3 different variants of read_id implementation:
1. opcode only. Found in GD5FxGQ4xF.
2. opcode + 1 addr byte. Found in GD5GxGQ4xA/E
3. opcode + 1 dummy byte. Found in other currently supported chips.
Original implementation was for variant 1 and let detect function
of chips with variant 2 and 3 to ignore the first byte. This isn't
robust:
1. For chips of variant 2, if SPI master doesn't keep MOSI low
during read, chip will get a random id offset, and the entire id
buffer will shift by that offset, causing detect failure.
2. For chips of variant 1, if it happens to get a devid that equals
to manufacture id of variant 2 or 3 chips, it'll get incorrectly
detected.
This patch reworks detect procedure to address problems above. New
logic do detection for all variants separatedly, in 1-2-3 order.
Since all current detect methods do exactly the same id matching
procedure, unify them into core.c and remove detect method from
manufacture_ops.
Tested on GD5F1GQ4UAYIG and W25N01GVZEIG.
Signed-off-by: Chuanhong Guo <gch981213@gmail.com>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Link: https://lore.kernel.org/linux-mtd/20200208074439.146296-1-gch981213@gmail.com
The 1Gb Macronix chip can have a maximum of 20 bad blocks, while
the 2Gb version has twice as many blocks and therefore the maximum
number of bad blocks is 40.
The 4Gb GigaDevice GD5F4GQ4xA has twice as many blocks as its 2Gb
counterpart and therefore a maximum of 80 bad blocks.
Fixes: 377e517b5f ("mtd: nand: Add max_bad_eraseblocks_per_lun info to memorg")
Reported-by: Emil Lenngren <emil.lenngren@gmail.com>
Signed-off-by: Frieder Schrempf <frieder.schrempf@kontron.de>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
NAND datasheets usually give the maximum number of bad blocks per LUN
and this number can be used to help upper layers decide how much blocks
they should reserve for bad block handling.
Add a max_bad_eraseblocks_per_lun to the nand_memory_organization
struct and update the NAND_MEMORG() macro (and its users) accordingly.
We also provide a default mtd->_max_bad_blocks() implementation.
Signed-off-by: Boris Brezillon <bbrezillon@kernel.org>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Reviewed-by: Frieder Schrempf <frieder.schrempf@kontron.de>
MX35LF2GE4AB is almost identical to MX35LF1GE4AB except it has 2 times
more eraseblocks per LUN and exposes 2 planes instead of 1.
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Signed-off-by: Boris Brezillon <boris.brezillon@bootlin.com>
