The 1Gb Macronix chip can have a maximum of 20 bad blocks, while
the 2Gb version has twice as many blocks and therefore the maximum
number of bad blocks is 40.
The 4Gb GigaDevice GD5F4GQ4xA has twice as many blocks as its 2Gb
counterpart and therefore a maximum of 80 bad blocks.
Fixes: 377e517b5f ("mtd: nand: Add max_bad_eraseblocks_per_lun info to memorg")
Reported-by: Emil Lenngren <emil.lenngren@gmail.com>
Signed-off-by: Frieder Schrempf <frieder.schrempf@kontron.de>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
NAND datasheets usually give the maximum number of bad blocks per LUN
and this number can be used to help upper layers decide how much blocks
they should reserve for bad block handling.
Add a max_bad_eraseblocks_per_lun to the nand_memory_organization
struct and update the NAND_MEMORG() macro (and its users) accordingly.
We also provide a default mtd->_max_bad_blocks() implementation.
Signed-off-by: Boris Brezillon <bbrezillon@kernel.org>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Reviewed-by: Frieder Schrempf <frieder.schrempf@kontron.de>
MX35LF2GE4AB is almost identical to MX35LF1GE4AB except it has 2 times
more eraseblocks per LUN and exposes 2 planes instead of 1.
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Signed-off-by: Boris Brezillon <boris.brezillon@bootlin.com>
