mtd: nand: Add max_bad_eraseblocks_per_lun info to memorg
NAND datasheets usually give the maximum number of bad blocks per LUN and this number can be used to help upper layers decide how much blocks they should reserve for bad block handling. Add a max_bad_eraseblocks_per_lun to the nand_memory_organization struct and update the NAND_MEMORG() macro (and its users) accordingly. We also provide a default mtd->_max_bad_blocks() implementation. Signed-off-by: Boris Brezillon <bbrezillon@kernel.org> Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com> Reviewed-by: Frieder Schrempf <frieder.schrempf@kontron.de>
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committed by
Miquel Raynal

parent
d090c25028
commit
377e517b5f
@@ -100,7 +100,7 @@ static int mx35lf1ge4ab_ecc_get_status(struct spinand_device *spinand,
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static const struct spinand_info macronix_spinand_table[] = {
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SPINAND_INFO("MX35LF1GE4AB", 0x12,
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NAND_MEMORG(1, 2048, 64, 64, 1024, 1, 1, 1),
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NAND_MEMORG(1, 2048, 64, 64, 1024, 40, 1, 1, 1),
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NAND_ECCREQ(4, 512),
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SPINAND_INFO_OP_VARIANTS(&read_cache_variants,
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&write_cache_variants,
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@@ -109,7 +109,7 @@ static const struct spinand_info macronix_spinand_table[] = {
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SPINAND_ECCINFO(&mx35lfxge4ab_ooblayout,
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mx35lf1ge4ab_ecc_get_status)),
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SPINAND_INFO("MX35LF2GE4AB", 0x22,
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NAND_MEMORG(1, 2048, 64, 64, 2048, 2, 1, 1),
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NAND_MEMORG(1, 2048, 64, 64, 2048, 20, 2, 1, 1),
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NAND_ECCREQ(4, 512),
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SPINAND_INFO_OP_VARIANTS(&read_cache_variants,
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&write_cache_variants,
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